Plasma-Enhanced Chemical Vapor Deposition (PECVD)
Oxford Instruments PECVD 80+
- Plasma assisted deposition of dielectric layers
- Sample size up to 6”
- Base pressure 2 mTorr
- RF 13.56 MHz and LF 40 kHz generators for stress-free layers
- 2.5% SiH4 in N2, NH3, N2O gas
- CF4, O2 for reactor cleaning
- SiOx, SiOxNy and SiNx
Oxford Instruments PECVD Plasma Pro 80 (PECVD2)
- Plasma assisted deposition of dielectric layers
- Sample size up to 6”
- RF 13.56 MHz and LF 40 kHz
- 2.5% SiH4, in N2, NH3, N2O ,CF4, N2
- SiOx, SiOxNy and SiNx
- Endpointdetection for Plasma Cleaning