Metal-Organic Vapor Phase Epitaxy (MOVPE)

Responsibility:

MOVPE epitaxy in FIRST

AIXTRON AIX 200/4

  • Growth of epitaxial III-V compounds on InP and GaAs
  • TMIn, TMGa, TMAl group III sources, AsH3, PH3, TMSb group V sources SiH4, DETe n-dopant sources DMZn, CBr4 p-dopant sources
  • EpiRAS in situ growth monitoring
  • Growth on 2” and 3” substrates
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