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Capacitance-Voltage Profiling (CV)
Capacitance-Voltage Profiling (CV)
Responsibility:
Olivier Ostinelli
Paul Holz
CV-Profiler Dage CVP 21
Electrochemical determination of doping profiles in InP, GaAs, GaN, and Si
Automatic electrolyte change
“Dry wafer” measurements
Related Content
chevron_right
Annealing
chevron_right
Atomic Force Microscopy (AFM)
chevron_right
Atomic Layer Deposition (ALD)
chevron_right
Bonding
chevron_right
Electrical Testing (Probing)
chevron_right
Electron-Beam Evaporation
chevron_right
Electron-Beam Lithography (EBL)
chevron_right
Electroplating of Gold
chevron_right
Hall Effect Measurement
chevron_right
Inductively-Coupled Plasma Etching (ICP)
chevron_right
KOYO oven
chevron_right
Lapping
chevron_right
Laserwriter
chevron_right
Magnetron Sputtering
chevron_right
Maskaligners
chevron_right
Metal-Organic Vapor Phase Epitaxy (MOVPE)
chevron_right
Micromanipulation
chevron_right
Molecular Beam Epitaxy (MBE)
chevron_right
Optical Microscopy
chevron_right
Optical Reflectometry
chevron_right
Photoluminescence Mapping (PLM)
chevron_right
Photoresist Spinning
chevron_right
Plasma-Enhanced Chemical Vapor Deposition (PECVD)
chevron_right
Reactive Ion Etching (RIE)
chevron_right
Scanning Electron Microscopy (SEM)
chevron_right
Spectroscopic Ellipsometry
chevron_right
Stress Measurements
chevron_right
Surface Profiling
chevron_right
Wafer Cleaning
chevron_right
Wafer Cutting
chevron_right
Wet Etching
chevron_right
X-ray Diffraction (XRD)
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Research Equipment
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