Molecular Beam Epitaxy (MBE)

Responsibility:

Processes:

• Standard III-V epitaxial growth of binary and ternary semiconductor materials containing Ga, Al, In, As, Sb.
  
• Only GaAs and GaAs substrates are allowed in the growth chamber.
  
• Doping sources: Si, CBr₄
• Growth of thick structures is possible, e.g. DBRs and VECSEL devices.
• Process control with RHEED, BandiT and RGA.

Processes:

• Exploratory system for a variety of binary to quinary III-V compound semiconductors
  
• No silicon or sapphire subtrates are allowed
  
• Sources: As, P, Sb, Ga, In, Al
  
• Doping source:  Si
• Growth of thick structures is limited to the use of P-, Sb- or As-containing materials only
• Process control with RHEED, BandiT, optical pyrometer and RGA

Responsibility:

Processes:

• Epitaxial growth of unipolar III-V compounds on InP and GaAs substrates
• Growth chamber equipped with 10 cell ports
• Sources: As, Ga, Al, In, Si (dopant)
• Process control: RHEED, optical pyrometer

• Atomic hydrogen cleaning of substrate surfaces as elevated temperatures
• Process control with RHEED and RGA
  
• Effusion and cracker cell baking and storage