Magnetron Sputtering

Responsibility:

Mantis HiPIMS:



PVD magnetron sputtering:


For training (duration: 2 days) or depositions, please fill out the protected pagefollowing form and send it to Nensi Toncich. Training is only possible after participation in the FIRST introduction day.  

Magnetron sputtering system

Mantis HiPIMS

  • Sputter coating of a wide range of substrate materials like metals, ceramics and polymers
  • Target materials: Al, Cr, Cu, IGZO, ITO, Si, Ta, Ti, W others on request
  • Confocal arrangement of five sources for creation of combinatorial thin films
  • Four 3-inch diameter magnetron sputter sources
  • Three 720W DC power supplies units
  • One 300W RF power supply unit with matching network
  • HiPIMS DC pulsed power supply unit for dense film microstructures (1kW, 0-1kV, 0-100A, max pulse rate 10 kHz). The pulsed source can be used by superimposing a DC bias voltage
  • Maximum substrate size: 4-inch
  • Maximum substrate temperature: 800°C
  • Operating pressure range: 1-12 mTorr in Ar or gas mixture (Ar, N2, O2)
  • Mass flow control units: Ar (100 sccm), O2 (100 sccm), and N2 (100 sccm)
  • Base pressure of the main chamber: P < 1 x 10-6 mbar
  • Loadlock with separate pumping system for fast sample loading
  • Nano-particle target for particle co-sputtering (particle size range= 20-200nm)
  • Three 1-inch Nano-particle target sources with 3 DC power supply units
  • Target materials for nano-particle sources: Al, Ag, Au, Cu, Fe, Ni, Pt
  • Residual gas analyzer (RGA)
Magnetron sputtering system

PVD magnetron sputtering

  • Target materials: Ag, Al, Al2O3, AlLi, AlMg, Au, Co, Cr, Cu, Fe, FeMnPd, Gd, Ge, ITO, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Si, SiO2, Sn, Ta, Ti, TiN, TiO2, W, Y, Zn, Zr, others on request
  • Sputter coating of a wide range of substrate materials like metals, ceramics and polymers
  • Confocal arrangement of four sources for creation of combinatorial thin films
  • Four 3-inch diameter magnetron sputter sources with 1 spare port for optional sputter source or ion source
  • Ion source (KRI - maximum power 1200 eV, maximum current 10 mA) for surface treatment or substrate cleaning
  • Four 500 Watt DC supplies and 600 Watt RF supply with matching network
  • Maximum substrate size: 4"
  • Maximum substrate temperature: 700 °C
  • Liquid-cooled chuck (e.g. LN2, water) for low temperature depositions or treatments (quenching)
  • Operating pressure range: 1 x 10-3 to 0.25 mbar in Ar gas or mix
  • Mass flow control units: Ar (100 sccm), O2 (50 sccm), and N2 (50 sccm)
  • Cryo pump: 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar
  • Base pressure of the main chamber: P < 1 x 10-6 mbar
  • Loadlock with separate pump for fast sample loading
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