Magnetron Sputtering

Responsibility:

Mantis HiPIMS:

PVD magnetron sputtering:

For training (duration: 2 days) or depositions, please fill out the protected page following form and send it to Nensi Toncich. Training is only possible after participation in the FIRST introduction day.

Mantis HiPIMS

Sputter coating of a wide range of substrate materials like metals, ceramics and polymers
Target materials: Al, Cr, Cu, IGZO, ITO, Si, Ta, Ti, W others on request
Confocal arrangement of five sources for creation of combinatorial thin films
Four 3-inch diameter magnetron sputter sources
Three 720W DC power supplies units
One 300W RF power supply unit with matching network
HiPIMS DC pulsed power supply unit for dense film microstructures (1kW, 0-1kV, 0-100A, max pulse rate 10 kHz). The pulsed source can be used by superimposing a DC bias voltage
Maximum substrate size: 4-inch
Maximum substrate temperature: 800°C
Operating pressure range: 1-12 mTorr in Ar or gas mixture (Ar, N2, O2)
Mass flow control units: Ar (100 sccm), O2 (100 sccm), and N2 (100 sccm)
Base pressure of the main chamber: P < 1 x 10-6 mbar
Loadlock with separate pumping system for fast sample loading
Nano-particle target for particle co-sputtering (particle size range= 20-200nm)
Three 1-inch Nano-particle target sources with 3 DC power supply units
Target materials for nano-particle sources: Al, Ag, Au, Cu, Fe, Ni, Pt
Residual gas analyzer (RGA)

PVD magnetron sputtering

Target materials: Ag, Al, Al₂O₃, AlLi, AlMg, Au, Co, Cr, Cu, Fe, FeMnPd, Gd, Ge, ITO, Mg, Mn, Mo, Nb, Ni, Pd, Pt, Si, SiO₂, Sn, Ta, Ti, TiN, TiO₂, W, Y, Zn, Zr, others on request
Sputter coating of a wide range of substrate materials like metals, ceramics and polymers
Confocal arrangement of four sources for creation of combinatorial thin films
Four 3-inch diameter magnetron sputter sources with 1 spare port for optional sputter source or ion source
Ion source (KRI - maximum power 1200 eV, maximum current 10 mA) for surface treatment or substrate cleaning
Four 500 Watt DC supplies and 600 Watt RF supply with matching network
Maximum substrate size: 4"
Maximum substrate temperature: 700 °C
Liquid-cooled chuck (e.g. LN2, water) for low temperature depositions or treatments (quenching)
Operating pressure range: 1 x 10-3 to 0.25 mbar in Ar gas or mix
Mass flow control units: Ar (100 sccm), O2 (50 sccm), and N2 (50 sccm)
Cryo pump: 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar
Base pressure of the main chamber: P < 1 x 10-6 mbar
Loadlock with separate pump for fast sample loading