Electron-Beam Evaporation

Responsibility:

Plassys 3
  • 10 kV 0.6 A electron beam gun
  • Base pressure: main chamber below 2x10-8 mbar, loadlock below 1x10-7 mbar, integrated bakeout
  • Evaporation of metals (below 1x10-7 mbar) and dielectrics (1x10-6 ..1x10-5 mbar)
  • 8 pockets of 20 ccm volume, different liners depending on material
  • Materials: *Au* *Ti* Pt Cr Ge Al Ni Pd *Al2O3* *SiO2* In2O3 ITO etc.
    (materials *marked* are always present, others may change according to user requests)
  • Sample size up to 6 inch with uniformity of 5% uniformity over 6 inch, 2% over 4 inch
  • Sample holder with tilting
  • 6 MHz crystal rate monitor (two crystals)
  • Ar sputter ion source with O2 line in loadlock, separated from main chamber

Responsibility:




  1.  
Plassys I Deposition
  • Electron beam evaporation of metals
  • 10 keV electron beam energy, 10 kW power
  • Ti, Pt, Au, Cr, Ni, Ge, Ta (optional), Cu (optional), Pd (optional), W (Optional)
  • Sample size up to 4", 3 times 2"
  • 8 cm3 pockets
  • Tiltable sample holder
  • 6 MHz X-tal monitor (three crystals)
  • Ar sputter ion source

Responsibility:


Plassys II Deposition
  • Thin film (<100 nm) evaporation of metals with electron beam
  • 10 keV electron beam energy, 10 kW power
  • Ti, W, Au, Al, Mo, Cu
  • Sample size up to 4"
  • 8 cm3 pockets
  • Tiltable sampleholder
  • O2, Ar/O2 oxidation line
  • 5.5 GHz X-tal monitor
  • Ar sputter ion source
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