Plasma Processing, CLA

PlasmaPro®Estrelas100:

• Plasma etching of silicon
• Standard sample size 4’’, 6’’ possible
• Loadlock to transfer samples
• Base pressure < 7*10^-9 Torr
• Ar, O₂, C₄F₈, SF₆ gases
• Bosh process recipes for various demands
• Etch rate > 10 µm/min
• Selectivity > 350
• Etch angle > 89.3°

• Plasma etching of dielectric layers and photoresists
• Sample size up to 6”
  
• Base pressure <5*10^-5 Torr
  
• RF 13.56 MHz (500W) generator
  
• CHF₃, CF₄, SF₆, O₂, Ar gas