Molecular Beam Epitaxy (MBE)
MBE is a a thin film crystal growth technique.
Processes:
- Exploratory system for a variety of binary to quinary III-V compound semiconductors
- No silicon or sapphire subtrates are allowed
- Sources: As, P, Sb, Ga, In, Al
- Doping source: Si
- Growth of thick structures is limited to the use of P-, Sb- or As-containing materials only
- Process control with RHEED, BandiT, optical pyrometer and RGA
Processes:
- Epitaxial growth of unipolar III-V compounds on InP and GaAs substrates
- Growth chamber equipped with 10 cell ports
- Sources: As, Ga, Al, In, Si (dopant)
- Process control: RHEED, optical pyrometer
- Atomic hydrogen cleaning of substrate surfaces as elevated temperatures
- Process control with RHEED and RGA
- Effusion and cracker cell baking and storage