Magnetron Sputtering

Mantis HiPIMS

Sputter coating of a wide range of substrate materials like metals, ceramics and polymers
Target materials: Al, Cr, Cu, IGZO, ITO, Si, Ta, Ti, W others on request
Confocal arrangement of five sources for creation of combinatorial thin films
Four 3-inch diameter magnetron sputter sources
Three 720W DC power supplies units
One 300W RF power supply unit with matching network
HiPIMS DC pulsed power supply unit for dense film microstructures (1kW, 0-1kV, 0-100A, max pulse rate 10 kHz). The pulsed source can be used by superimposing a DC bias voltage
Maximum substrate size: 4-inch
Maximum substrate temperature: 800°C
Operating pressure range: 1-12 mTorr in Ar or gas mixture (Ar, N2, O2)
Mass flow control units: Ar (100 sccm), O2 (100 sccm), and N2 (100 sccm)
Base pressure of the main chamber: P < 1 x 10-6 mbar
Loadlock with separate pumping system for fast sample loading
Nano-particle target for particle co-sputtering (particle size range= 20-200nm)
Three 1-inch Nano-particle target sources with 3 DC power supply units
Target materials for nano-particle sources: Al, Ag, Au, Cu, Fe, Ni, Pt
Residual gas analyzer (RGA)

Target materials: Ag, Al, Al2O3, AlLi, AlMg, AlN, Au, B, BN, Co, Cr, Cu, CuZr, Fe, FeMnPd, Ge, IGZO, In, ITO, Mg, Mn, Mo, Nb, NbTi, Ni, NiCo 50:50, NiFe 50:50, Pd, Pt, Ru, Si, SiO2, Sn, Ta, Ti, TiN, TiO2, V, W, WO3, Y, Zn, ZnO, Zr
Other target materials on request.
Sputter coating of a wide range of substrate made of metals or dielectrics. NO ORGANIC SUBSTRATES (except vacuum suitable polymers)
Confocal arrangement of four sources for depositions of multi-material thin films (co-sputtering)
Four 3-inch diameter magnetron sputter sources
Four 300 Watt DC supplies and 75 Watt RF supply with matching network
Maximum substrate size: 4-inch
Maximum substrate temperature: 600 °C
Operating pressure range: 1 x 10-3 to ~0.1 mbar in argon atmosphere
Nitrogen and oxygen gas supply for reactive sputtering
Mass flow control units: Ar (100 sccm), O2 (50 sccm), and N2 (50 sccm)
Cryo pump: 4,000 l/sec for water (the dominant background gas), 1,500 l/sec for air, and 1,200 l/sec for Ar
Base pressure of the main chamber: P < 1 x10^-6 mbar
Loadlock with separate pump for fast sample loading
RGA system for gas analysis in the chamber