Electron-Beam Lithography (EBL)

Raith 150TWO

• Schottky TFE electron beam source
• Dose stability for any time period
• In-Lens SE detector for shadow free metrology
• Laser height sensor for automatic focus setting
• Digital 20 MHz Pattern Generator
• Laser interferometer with 1 nm resolution
• Small samples up to 8" wafers compatible
• Beam size < 2 nm @ EHT > 20kV
• Beam position stability ≤ 200 nm in 8 hours
• Beam current stability ≤ 0.5% in 8 hours
• Minimum feature size < 10 nm
• 200-μm field stitching < 40 nm accuracy
  
• 200-μm field overlay < 40 nm accuracy
  
• High degree of automation for automatic pattern placement and long exposures