Bonding

• Wire wedge bonding of 25 mue Gold wires
• Deep access tool for bonding in packages
• Part size up to 200 x 200 mm²
  
• Ribbon bonding tools for HF-applications (Option on request)
  
• Heated workholder (2") for clamping plates and DIL-packages
• Bonder and work place ESD (Electro Static Discharge) save for sensitive applications
• Ionizer (fan) for neutralize static charges on surfaces / devices

• Wedge bonding of 25 mue Aluminium wires
  
• Deep access tool for bonding in packages
• Part size up to 200 x 200 mm²
• Heated workholder (50 x 50 mm²) for clamping plates and DIL-packages
  
• Bonder and work place ESD (Electro Static Discharge) save for sensitive applications
• Ionizer (fan) for neutralize static charges on surfaces / devices

• Fully automatic bonding with manual part feeding
• Travel distances 100 x 100 mm
• Two bonding heads:
  • 5630i for Au wire
    Thin Wire Wedge-Wedge
  • 5632i for Al wire
    Thin Wire Deep Access Wedge-Wedge

Note:
Due to the configuration required, this tool is only recommended for large bonding jobs, or those requiring precise bond placement. Manual bonders are more useful for smaller jobs (<100 bonds).

• Thermocompression, anodic, eutectic and adhesive wafer bonding possible for up to 3'' wafers and smaller pieces (down to ~10x10 mm²)
• Up to 20 kN force for full wafers (maximum force scales with sample size)
• Maximum temperature 500 °C, programmable temperature ramps, temp. uniformity ⁺/_- 2%
• N₂ purge/cooling gas
• Chamber pressure control during bonding from atmospheric down to 5*10^-5mbar (turbo pump)
• SiC clamping plate for homogeneous force and temperature distribution
• Automatic operation (recipes) with live plots of process parameters

• Wafer aligning and bonding up to 4” wafer and smaller pieces (1/4 3" tooling also)
• Maximum contact force 15000 N
• Bonding in vacuum possible (chamber pressure < 1*10^-5 mbar)
• Max temperature: 560 °C
• N₂ purge gas
• Automatic and manual operation possible